Datasheet > V20100S_11

V20100S_11

更新时间： 2024-11-18 11:57:31

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	145K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier

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中文翻译

获取价格

数据手册

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V20100S_11 数据手册

New Product

V20100S, VI20100S

Vishay General Semiconductor

High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.446 V at I_F= 5 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

TO-220AB

TO-262AA

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

VI20100S

V20100S

• Halogen-free according to IEC 61249-2-21 definition

PIN 1

PIN 3

PIN 1

PIN 3

PIN 2

CASE

MECHANICAL DATA

Case: TO-220AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

Base P/N-M3

- halogen-free, RoHS compliant, and

I_F(AV)

20 A

100 V

250 A

0.69 V

150 °C

commercial grade

Base P/NHM3 - halogen-free, RoHS compliant, and

AEC-Q101 qualified

V_RRM

I_FSM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

V_Fat I_F= 20 A

T_Jmax.

TYPICAL APPLICATIONS

Polarity: As marked

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

V20100S

VI20100S

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

100

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load

I_FSM

250

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

Document Number: 89190

Revision: 25-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

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与V20100S_11相关器件

型号	品牌	获取价格	描述	数据表
V20100S_12	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20100S-E3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A
V20100S-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A
V20100SG	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
V20100SG_08	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
V20100SG_09	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20100SG-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
V20100SG-E3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20100SGHM3/4W	VISHAY	获取价格	DIODE 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL
V20100SHM3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, TO-220AB, HALOGE

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