Datasheet > V20100SHM3-4W

V20100SHM3-4W

更新时间： 2024-11-22 01:07:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	145K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V20100SHM3-4W 数据手册

New Product

V20100S, VI20100S

Vishay General Semiconductor

High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.446 V at I_F= 5 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

TO-220AB

TO-262AA

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

VI20100S

V20100S

• Halogen-free according to IEC 61249-2-21 definition

PIN 1

PIN 3

PIN 1

PIN 3

PIN 2

CASE

MECHANICAL DATA

Case: TO-220AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

Base P/N-M3

- halogen-free, RoHS compliant, and

I_F(AV)

20 A

100 V

250 A

0.69 V

150 °C

commercial grade

Base P/NHM3 - halogen-free, RoHS compliant, and

AEC-Q101 qualified

V_RRM

I_FSM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

V_Fat I_F= 20 A

T_Jmax.

TYPICAL APPLICATIONS

Polarity: As marked

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

V20100S

VI20100S

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

100

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load

I_FSM

250

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

Document Number: 89190

Revision: 25-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与V20100SHM3-4W相关器件

型号	品牌	获取价格	描述	数据表
V20100S-M3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A
V20100S-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, TO-220AB, HALOGE
V20100S-M3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20120C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
V20120C, VI20120C	VISHAY	获取价格	Dual High Voltage TMBS® (Trench MOS Barrier S
V20120C_11	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20120C_12	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20120C-E3	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
V20120C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
V20120C-E3_15	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier

与V20100SHM3-4W相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

V20100SHM3-4W

V20100SHM3-4W 数据手册

与V20100SHM3-4W相关器件

与V20100SHM3-4W相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V20100SHM3-4W

V20100SHM3-4W 数据手册

与V20100SHM3-4W相关器件

与V20100SHM3-4W相关文章

您还可以找

您在本页遇到什么问题？