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V20100S-M3 PDF预览

V20100S-M3

更新时间: 2024-09-28 14:55:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 215K
描述
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

V20100S-M3 数据手册

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VF20100S-M3, VB20100S-M3  
www.vishay.com  
Vishay General Semiconductor  
High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier  
Ultra Low VF = 0.446 V at IF = 5 A  
FEATURES  
D2PAK (TO-263AB)  
ITO-220AB  
• Trench MOS Schottky technology  
• Low forward voltage drop, low power losses  
• High efficiency operation  
K
• Low thermal resistance  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for D2PAK (TO-263AB) package)  
A
NC  
3
2
• Solder bath temperature 275 °C maximum, 10 s,  
per JESD 22-B106 (for ITO-220AB package)  
1
VF20100S  
VB20100S  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PIN 1  
NC  
A
K
PIN 2  
HEATSINK  
PIN 3  
TYPICAL APPLICATIONS  
For use in high frequency converters, switching power  
supplies, freewheeling diodes, OR-ing diode, DC/DC  
converters and reverse battery protection.  
PRIMARY CHARACTERISTICS  
IF(AV)  
20 A  
VRRM  
100 V  
250 A  
0.69 V  
150 °C  
MECHANICAL DATA  
Case: ITO-220AB, D2PAK (TO-263AB)  
IFSM  
VF at IF = 20 A  
TJ max.  
Molding compound meets UL 94 V-0 flammability rating  
Package  
ITO-220AB, D2PAK (TO-263AB)  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
commercial grade  
Circuit configuration  
Single  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
VF20100-M3 suffix meets JESD 201 class 1A whisker test  
VI20100-M3 suffix meets JESD 201 class 2 whisker test  
Polarity: as marked  
Mounting Torque: 10 in-lbs max.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VRRM  
VF20100S  
VB20100S  
UNIT  
Max. repetitive peak reverse voltage  
100  
20  
V
A
Max. average forward rectified current (fig. 1)  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
250  
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH  
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C 2 °C  
Voltage rate of change (rated VR)  
EAS  
IRRM  
210  
1.0  
mJ  
A
dV/dt  
VAC  
10 000  
1500  
V/μs  
V
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min  
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +150  
°C  
Revision: 03-Jul-2023  
Document Number: 87648  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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