Datasheet > V20100S-M3

V20100S-M3

更新时间： 2024-11-19 14:55:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	215K
描述
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

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V20100S-M3 数据手册

VF20100S-M3, VB20100S-M3

www.vishay.com

Vishay General Semiconductor

High Voltage TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.446 V at I_F= 5 A

FEATURES

D²PAK (TO-263AB)

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for D²PAK (TO-263AB) package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for ITO-220AB package)

VF20100S

VB20100S

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PIN 1

PIN 2

HEATSINK

PIN 3

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

PRIMARY CHARACTERISTICS

I_F(AV)

20 A

V_RRM

100 V

250 A

0.69 V

150 °C

MECHANICAL DATA

Case: ITO-220AB, D²PAK (TO-263AB)

I_FSM

V_Fat I_F= 20 A

T_Jmax.

Molding compound meets UL 94 V-0 flammability rating

Package

ITO-220AB, D²PAK (TO-263AB)

Base P/N-M3

- halogen-free, RoHS-compliant, and

commercial grade

Circuit configuration

Single

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

VF20100-M3 suffix meets JESD 201 class 1A whisker test

VI20100-M3 suffix meets JESD 201 class 2 whisker test

Polarity: as marked

Mounting Torque: 10 in-lbs max.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

VF20100S

VB20100S

UNIT

Max. repetitive peak reverse voltage

100

Max. average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

250

Non-repetitive avalanche energy at T_J= 25 °C, L = 60 mH

Peak repetitive reverse current at t_p= 2 μs, 1 kHz, T_J= 38 °C 2 °C

Voltage rate of change (rated V_R)

E_AS

I_RRM

210

1.0

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Revision: 03-Jul-2023

Document Number: 87648

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与V20100S-M3相关器件

型号	品牌	获取价格	描述	数据表
V20100S-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, TO-220AB, HALOGE
V20100S-M3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20120C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
V20120C, VI20120C	VISHAY	获取价格	Dual High Voltage TMBS® (Trench MOS Barrier S
V20120C_11	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20120C_12	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20120C-E3	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
V20120C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
V20120C-E3_15	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20120CHM3/4W	VISHAY	获取价格	DIODE 10 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL

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