Datasheet > V20100SG-E3-4W

V20100SG-E3-4W

更新时间： 2024-11-18 08:14:03

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	149K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier

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V20100SG-E3-4W 数据手册

New Product

V20100SG, VF20100SG, VB20100SG, VI20100SG

Vishay General Semiconductor

High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.50 V at I_F= 5 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

TO-220AB

ITO-220AB

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per JESD

22-B106 (for TO-220AB, ITO-220AB, and TO-262AA

package)

V20100SG

TO-263AB

VF20100SG

TO-262AA

PIN 1

PIN 3

PIN 1

PIN 3

PIN 2

CASE

PIN 2

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

VB20100SG

MECHANICAL DATA

VI20100SG

PIN 1

PIN 3

Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

PIN 2

HEATSINK

PRIMARY CHARACTERISTICS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

I_F(AV)

V_RRM

I_FSM

20 A

100 V

150 A

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

V_Fat I_F= 20 A

T_Jmax.

0.75 V

150 °C

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL V20100SG VF20100SG VB20100SG VI20100SG

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

I_F(AV)

100

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

E_AS

150

Non-repetitive avalanche energy at T_J= 25 °C, L = 60 mH

Peak repetitive reverse current

at t_p= 2 µs, 1 kHz, T_J= 38 °C 2 °C

I_RRM

1.0

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/µs

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Document Number: 88966

Revision: 08-Oct-09

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4 5

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与V20100SG-E3-4W相关器件

型号	品牌	获取价格	描述	数据表
V20100SGHM3/4W	VISHAY	获取价格	DIODE 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL
V20100SHM3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, TO-220AB, HALOGE
V20100SHM3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20100S-M3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A
V20100S-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, TO-220AB, HALOGE
V20100S-M3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20120C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
V20120C, VI20120C	VISHAY	获取价格	Dual High Voltage TMBS® (Trench MOS Barrier S
V20120C_11	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20120C_12	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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