Datasheet > V20100SG_08

V20100SG_08

更新时间： 2024-11-21 05:52:35

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	159K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

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V20100SG_08 数据手册

New Product

V20100SG, VF20100SG & VI20100SG

Vishay General Semiconductor

High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.50 V at I = 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

ITO-220AB

• Low forward voltage drop, low power

losses

• High efficiency operation

• Low thermal resistance

• Solder dip 260 °C, 40 s

V20100SG

VF20100SG

PIN 1

PIN 3

PIN 1

PIN 2

CASE

PIN 2

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PIN 3

TO-262AA

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

VI20100SG

MECHANICAL DATA

PIN 1

PIN 3

PIN 2

Case: TO-220AB, ITO-220AB and TO-262AA

Epoxy meets UL 94V-0 flammability rating

PRIMARY CHARACTERISTICS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

I_F(AV)

V_RRM

I_FSM

20 A

100 V

150 A

V_Fat I_F= 20 A

T_Jmax.

0.75 V

150 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20100SG

VF20100SG

VI20100SG

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

100

I_F(AV)

Peak forward surge current 10 ms single half

sine-wave superimposed on rated load

I_FSM

150

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

V_AC

1500

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Document Number: 88966

Revision: 31-Jul-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

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与V20100SG_08相关器件

型号	品牌	获取价格	描述	数据表
V20100SG_09	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20100SG-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
V20100SG-E3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20100SGHM3/4W	VISHAY	获取价格	DIODE 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL
V20100SHM3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, TO-220AB, HALOGE
V20100SHM3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20100S-M3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A
V20100S-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, TO-220AB, HALOGE
V20100S-M3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20120C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

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