Datasheet > UPA839TF

UPA839TF

更新时间： 2024-01-16 18:22:26

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
2页	20K
描述
NPN SILICON EPITAXIAL TWIN TRANSISTOR

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中文翻译

获取价格

数据手册

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UPA839TF 数据手册

PRELIMINARY DATA SHEET

NPN SILICON EPITAXIAL

TWIN TRANSISTOR

UPA839TF

FEATURES

OUTLINE DIMENSIONS (Units in mm)

Package Outline TS06

•

SMALL PACKAGE OUTLINE:

SOT-363 package measures just 2.0 mm x 1.25 mm

2.1 ± 0.1

1.25 ± 0.1

LOW HEIGHT PROFILE:

Just 0.60 mm high

TWO DIFFERENT DIE TYPES:

Q1 - Ideal oscillator transistor

Q2 - Ideal buffer amplifier transistor

0.65

+0.10

- 0.05

2.0 ± 0.2

0.22

(All Leads)

1.3

DESCRIPTION

TheUPA839TFcontainsoneNE680andoneNE856NPNhigh

frequency silicon bipolar chip. NEC's new low profile TF

package is ideal for all portable wireless applications where

reducing component height is a prime consideration. Each

transistorchipisindependentlymountedandeasilyconfigured

for oscillator/buffer amplifier and other applications.

0.6 ± 0.1

0.45

0.13 ± 0.05

0 ~ 0.1

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

Note: Pin 1 is the

lower left most pin as

the package lettering

is oriented and read

left to right.

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

3. Collector (Q2)

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

UPA839TF

TS06

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

µA

MIN

TYP

MAX

1.0

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

µA

1.0

DC Current Gain¹at VCE = 3 V, IC = 5 mA

120

8.0

0.3

7.5

1.9

200

Gain Bandwidth at VCE = 3 V, IC = 5 mA

GHz

5.5

Cre

|S21E|²

Feedback Capacitance²at VCB = 3 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 3 V, IC =5 mA, f = 2 GHz

Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz

0.7

5.5

3.2

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

µA

1.0

DC Current Gain¹at VCE = 3 V, IC = 7 mA

100

3.0

145

Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz

Feedback Capacitance²at VCB = 3 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz

Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz

GHz

4.5

0.7

Cre

|S21E|²

1.5

2.5

1.2

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with

emitter connected to guard pin of capacitances meter.

California Eastern Laboratories

中文翻译

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与UPA839TF相关器件

型号	品牌	获取价格	描述	数据表
UPA839TF-T1	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA840	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE
UPA840TC	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE
UPA840TC-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili
UPA840TC-T1	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE
UPA841TC	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN,
UPA841TC-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA841TC-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN,
UPA841TC-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA841TD	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR

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