Datasheet > UPA841TC-T1FB

UPA841TC-T1FB

更新时间： 2024-02-04 00:54:41

品牌	Logo	应用领域
日电电子 - NEC		放大器光电二极管晶体管
页数	文件大小	规格书
36页	174K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6

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UPA841TC-T1FB 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PDSO-F6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.29
最大集电极电流 (IC)：	0.03 A	基于收集器的最大容量：	0.7 pF
集电极-发射极最大电压：	6 V	配置：	SEPARATE, 2 ELEMENTS
最高频带：	L BAND	JESD-30 代码：	R-PDSO-F6
元件数量：	2	端子数量：	6
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	12000 MHz	Base Number Matches：	1

UPA841TC-T1FB 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA841TC

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

•

Low voltage operation

2 different built-in transistors (2SC5435, 2SC5600)

Q1: High gain transistor suited for buffer applications

f^T= 12.0 GHz TYP., S^21e²= 8.5 dB TYP. @ V^CE= 3 V, I^C= 10 mA, f = 2 GHz

Q2: Low phase distortion transistor suited for OSC applications

f^T= 5.0 GHz TYP., S^21e²= 4.0 dB TYP. @ V^CE= 1 V, I^C= 5 mA, f = 2 GHz

Flat-lead 6-pin thin-type ultra super minimold package

•

BUILT-IN TRANSISTORS

3-pin thin-type ultra super minimold part No.

2SC5435

2SC5600

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

3 kpcs/reel

Supplying Form

• 8 mm wide embossed taping

µPA841TC

µPA841TC-T1

• Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)

face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15201EJ2V0DS00 (2nd edition)

Date Published September 2001 NS CP(K)

The mark • shows major revised points.

2000, 2001

Printed in Japan

12 3 4 5 6 7...36

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与UPA841TC-T1FB相关器件

型号	品牌	获取价格	描述	数据表
UPA841TD	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
UPA841TD-T3	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
UPA841TD-T3-FB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
UPA842TC	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN,
UPA842TC-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN,
UPA842TC-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN,
UPA842TC-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN,
UPA843TC	NEC	获取价格	NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA S
UPA843TCFB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR
UPA843TCFB-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR

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