生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.72 | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 1 pF | 集电极-发射极最大电压: | 5.5 V |
配置: | SINGLE | 最高频带: | L BAND |
JESD-30 代码: | R-PDSO-F6 | 元件数量: | 2 |
端子数量: | 6 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 6500 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA842TC-FB | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, |
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UPA842TC-T1 | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, |
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UPA842TC-T1FB | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, |
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UPA843TC | NEC |
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NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA S |
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UPA843TCFB | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR |
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UPA843TCFB-T1 | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR |
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UPA843TC-T1 | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA S |
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UPA843TC-T1FB | NEC |
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RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, L Band, Silicon, NPN, ULTRA SU |
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UPA843TD | ETC |
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TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 210MA I(C) | TSOP |
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UPA843TD-FB | NEC |
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RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS |
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