Datasheet > UPA848TD-FB

UPA848TD-FB

更新时间： 2024-02-18 23:22:50

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
28页	150K
描述
RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, S Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6

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中文翻译

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UPA848TD-FB 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA848TD

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD

FEATURES

•

2 different built-in transistors (2SC5668, 2SC5676)

Q1: 21.0 GHz f^Thigh-gain transistor, ideal for 3.6 to 4.2 GHz oscillation application

f^T= 21.0 GHz TYP., S^21e²= 11.5 dB TYP. @ V^CE= 2 V, I^C= 20 mA, f = 2 GHz

Q2: Built-in low voltage operation, low phase distortion transistor suited for OSC operation

f^T= 5.5 GHz TYP., S^21e²= 4.0 dB TYP. @ V^CE= 1 V, I^C= 10 mA, f = 2 GHz

6-pin lead-less minimold package

•

BUILT-IN TRANSISTORS

3-pin thin-type ultra super minimold part No.

2SC5668

2SC5676

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

10 kpcs/reel

Supplying Form

µPA848TD

µPA848TD-T3

• 8 mm wide embossed taping

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15569EJ1V0DS00 (1st edition)

Date Published May 2001 NS CP(K)

Printed in Japan

2001

12 3 4 5 6 7...28

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