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UPA850TD-T3FB-A PDF预览

UPA850TD-T3FB-A

更新时间: 2024-01-19 23:08:01
品牌 Logo 应用领域
日电电子 - NEC 放大器ISM频段光电二极管晶体管
页数 文件大小 规格书
35页 172K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6

UPA850TD-T3FB-A 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:LEADLESS MINIMOLD PACKAGE-6Reach Compliance Code:compliant
风险等级:5.72最大集电极电流 (IC):0.03 A
基于收集器的最大容量:0.7 pF集电极-发射极最大电压:6 V
配置:SEPARATE, 2 ELEMENTS最高频带:L BAND
JESD-30 代码:R-PDSO-F6JESD-609代码:e6
湿度敏感等级:1元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):12000 MHzBase Number Matches:1

UPA850TD-T3FB-A 数据手册

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DATA SHEET  
NPN SILICON RF TWIN TRANSISTOR  
µPA850TD  
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)  
IN A 6-PIN LEAD-LESS MINIMOLD  
FEATURES  
Low voltage operation  
2 different built-in transistors (2SC5435, 2SC5736)  
Q1: High gain transistor  
fT = 12.0 GHz TYP., S21e 2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz  
Q2: Low phase distortion transistor suited for OSC applications  
fT = 5.0 GHz TYP., S21e 2 = 4.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz  
6-pin lead-less minimold package  
BUILT-IN TRANSISTORS  
Q1  
Q2  
3-pin thin-type ultra super minimold part No.  
2SC5435  
2SC5736  
ORDERING INFORMATION  
Part Number  
Quantity  
50 pcs (Non reel)  
10 kpcs/reel  
Supplying Form  
µPA850TD  
µPA850TD-T3  
• 8 mm wide embossed taping  
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10096EJ01V0DS (1st edition)  
Date Published February 2002 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2002  

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