Datasheet > UPA859TD

UPA859TD

更新时间： 2024-09-27 23:39:39

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
28页	136K
描述
Discrete

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数据手册

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UPA859TD 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA859TD

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD

FEATURES

•

Low voltage operation

2 different built-in transistors (2SC5737, 2SC5676)

Q1: Low noise transistor

NF = 1.5 dB TYP. @ V^CE= 1 V, I^C= 3 mA, f = 2 GHz

Q2: Low phase distortion transistor suited for OSC applications

f^T= 5.5 GHz TYP., S^21e²= 4.0 dB TYP. @ V^CE= 1 V, I^C= 10 mA, f = 2 GHz

6-pin lead-less minimold package

•

BUILT-IN TRANSISTORS

3-pin thin-type ultra super minimold part No.

2SC5737

2SC5676

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

10 kpcs/reel

Supplying Form

µPA859TD

µPA859TD-T3

• 8 mm wide embossed taping

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10065EJ01V0DS (1st edition)

Date Published January 2002 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2002

12 3 4 5 6 7...28

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