Datasheet > UPA861TD-T3FB

UPA861TD-T3FB

更新时间： 2024-01-13 04:10:45

品牌	Logo	应用领域
日电电子 - NEC		放大器光电二极管晶体管
页数	文件大小	规格书
28页	141K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD PACKAGE-6

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UPA861TD-T3FB 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA861TD

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD

FEATURES

•

Low voltage operation

2 different built-in transistors (2SC5436, 2SC5786)

Q1: High-gain transistor

f^T= 12.0 GHz TYP., S^21e²= 9.0 dB TYP. @ V^CE= 1 V, I^C= 10 mA, f = 2 GHz

Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications

f^T= 20.0 GHz TYP., S^21e²= 13.0 dB TYP. @ V^CE= 1 V, I^C= 20 mA, f = 2 GHz

NF = 1.4 dB TYP. @ V^CE= 1 V, I^C= 5 mA, f = 2 GHz, Z^S= Z^opt

6-pin lead-less minimold package

•

BUILT-IN TRANSISTORS

3-pin thin-type ultra super minimold part No.

2SC5436

2SC5786

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

10 kpcs/reel

Supplying Form

µPA861TD

µPA861TD-T3

• 8 mm wide embossed taping

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10057EJ02V0DS (2nd edition)

Date Published February 2002 CP(K)

The mark • shows major revised points.

Printed in Japan

NEC Compound Semiconductor Devices 2001, 2002

12 3 4 5 6 7...28

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