UPA861TD-T3FB-A

更新时间： 2024-02-21 11:54:21

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
10页	130K
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中文翻译

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数据手册

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UPA861TD-T3FB-A 数据手册

NEC's NPN SILICON

RF TWIN TRANSISTOR

UPA861TD

FEATURES

OUTLINE DIMENSIONS (Units in mm)

•

LOW VOLTAGE, LOW CURRENT OPERATION

LOW CAPACITANCE FOR WIDE TUNING RANGE

Package Outline TD

(TOP VIEW)

1.0±0.05

SMALL PACKAGE OUTLINE:

1.2 mm x 0.8 mm

+0.07

-0.05

0.8

(Top View)

•

LOW HEIGHT PROFILE:

Just 0.50 mm high

TWO DIFFERENT DIE TYPES:

Q1 - Ideal buffer amplifier transistor

Q2 - Ideal oscillator transistor

•

IDEAL FOR >3 GHz OSCILLATORS

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

4. Base (Q2)

DESCRIPTION

NEC's UPA861TD contains one NE894 and one NE687 NPN

high frequency silicon bipolar chip. The NE894 is an excellent

oscillator chip, featuring high fT and low current, low voltage

operation. The NE687 is an excellent buffer transistor, featur-

inglownoiseandhighgain. NEC'snewultrasmallTDpackage

is ideal for all portable wireless applications where reducing

board space is a prime consideration. Each transistor chip is

independently mounted and easily configured for oscillator/

buffer amplifier and other applications.

5. Emitter (Q2)

6. Base (Q1)

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

UPA861TD

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

100

140

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 5 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

DC Current Gain¹at VCE = 1 V, IC = 10 mA

110

12.0

0.4

Gain Bandwidth at VCE = 1 V, IC = 10 mA, f = 2 GHz

Feedback Capacitance²at VCB = 0.5 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 1 V, IC =10 mA, f = 2 GHz

Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz

GHz

10.0

Cre

|S21E|²

0.8

7.0

9.0

1.5

2.0

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 5 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

100

DC Current Gain¹at VCE = 1 V, IC = 5 mA

Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz

Feedback Capacitance²at VCB = 0.5 V, IE = 0, f = 1 MHz

GHz

17.0

20.0

0.22

13.0

1.4

Cre

0.30

2.5

|S21E|²E|²Insertion Power GainIat VCE = 1 V, IC = 20 mA, f = 2 GHz

NF Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, Zs = Zopt

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

11.0

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to

guard pin of capacitances meter.

California Eastern Laboratories

12 3 4 5 6 7...10

中文翻译

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与UPA861TD-T3FB-A相关器件

型号	品牌	获取价格	描述	数据表
UPA862TC	ETC	获取价格	Discrete
UPA862TC-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA862TC-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA862TD	CEL	获取价格	NPN SILICON RF TWIN TRANSISTOR
UPA862TD	NEC	获取价格	NECs NPN SILICON RF TWIN TRANSISTOR
UPA862TD	RENESAS	获取价格	NPN Silicon RF Twin Transistor with 2 Different Elements
UPA862TD-A	RENESAS	获取价格	NPN Silicon RF Twin Transistor with 2 Different Elements
UPA862TD-A-FB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
UPA862TD-A-YFB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
UPA862TD-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS

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