UPA862TD-A

更新时间： 2024-09-29 12:04:47

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体小信号双极晶体管射频小信号双极晶体管
页数	文件大小	规格书
20页	254K
描述
NPN Silicon RF Twin Transistor with 2 Different Elements

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中文翻译

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技术参数
数据手册

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UPA862TD-A 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.31
Is Samacsys：	N	Base Number Matches：	1

UPA862TD-A 数据手册

Preliminary Data Sheet

μPA862TD

R09DS0032EJ0200

NPN Silicon RF Twin Transistor (with 2 Different Elements)

in a 6-pin Lead-less Minimold

Rev.2.00

Dec 19, 2011

FEATURES

•

Low voltage operation

<R>

2 different built-in transistors (2SC5010, 2SC5801)

Q1: Built-in high gain transistor

f^T= 12.0 GHz TYP., ⏐S21e⏐²= 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

Q2: Built-in low phase distortion transistor suited for OSC operation

f^T= 4.5 GHz TYP., ⏐S21e⏐²= 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

6-pin lead-less minimold package

•

BUILT-IN TRANSISTORS

<R>

3-pin thin-type ultra super minimold part No.

2SC5010

2SC5801

ORDERING INFORMATION

Part Number Order Number

Quantity

Package

Supplying Form

μPA862TD

μPA862TD-A

50 pcs (Non reel) 6-pin lead -less minimold

• 8 mm wide embossed taping

μPA862TD-T3

μPA862TD-T3-A

10 kpcs/reel

(1208) (Pb-Free)

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face

the perforation side of the tape

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 50 pcs.

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R09DS0032EJ0200 Rev.2.00

Dec 19, 2011

Page 1 of 18

12 3 4 5 6 7...20

中文翻译

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