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UPA863TD-T3 PDF预览

UPA863TD-T3

更新时间: 2024-10-01 20:33:31
品牌 Logo 应用领域
日电电子 - NEC 光电二极管
页数 文件大小 规格书
28页 143K
描述
RF Small Signal Bipolar Transistor, LEADLESS MINIMOLD PACKAGE-6

UPA863TD-T3 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
风险等级:5.64JESD-30 代码:R-PDSO-F6
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

UPA863TD-T3 数据手册

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DATA SHEET  
NPN SILICON RF TWIN TRANSISTOR  
µPA863TD  
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)  
IN A 6-PIN LEAD-LESS MINIMOLD  
FEATURES  
Low voltage operation  
2 different built-in transistors (2SC5436, 2SC5800)  
Q1: Built-in high gain transistor  
fT = 12.0 GHz TYP., S21e 2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz  
Q2: Built-in low phase distortion transistor suited for OSC operation  
fT = 4.5 GHz TYP., S21e 2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz  
6-pin lead-less minimold package  
BUILT-IN TRANSISTORS  
Q1  
Q2  
3-pin thin-type ultra super minimold part No.  
2SC5436  
2SC5800  
ORDERING INFORMATION  
Part Number  
Quantity  
50 pcs (Non reel)  
10 kpcs/reel  
Supplying Form  
µPA863TD  
µPA863TD-T3  
• 8 mm wide embossed taping  
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape  
Remark To order evaluation samples, consult your NEC sales representative.  
Unit sample quantity is 50 pcs.  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. P15686EJ1V0DS00 (1st edition)  
Date Published July 2001 NS CP(K)  
Printed in Japan  
2001  
©

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