Datasheet > UPA869TD

UPA869TD

更新时间： 2024-02-02 20:53:23

品牌	Logo	应用领域
日电电子 - NEC		光电二极管晶体管
页数	文件大小	规格书
6页	66K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN, LEADLESS MINIMOLD, M16, 1208, 6 PIN

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技术参数
数据手册

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UPA869TD 技术参数

生命周期：	Transferred	包装说明：	LEADLESS MINIMOLD, M16, 1208, 6 PIN
Reach Compliance Code：	unknown	风险等级：	5.64
最大集电极电流 (IC)：	0.1 A	基于收集器的最大容量：	0.8 pF
集电极-发射极最大电压：	5 V	配置：	SEPARATE, 2 ELEMENTS
最高频带：	L BAND	JESD-30 代码：	R-PDSO-F6
元件数量：	2	端子数量：	6
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管元件材料：	SILICON GERMANIUM	标称过渡频率 (fT)：	6500 MHz
Base Number Matches：	1

UPA869TD 数据手册

PRELIMINARY DATA SHEET

NPN SILICON + SiGe RF TWIN TRANSISTOR

µPA869TD

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)

FEATURES

•

2 different built-in transistors (NESG2046M33, 2SC5800)

Q1: High gain SiGe transistor

f^T= 18 GHz TYP., S21e²= 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz

Q2: Low phase distortion transistor suited for OSC applications

f^T= 6.5 GHz TYP., S21e²= 5.5 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz

6-pin lead-less minimold (M16, 1208 package)

•

BUILT-IN TRANSISTORS

−

3-pin super lead-less minimold part No.

NESG2046M33

3-pin thin-type ultra super minimold part No.

−

2SC5800

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

10 kpcs/reel

Supplying Form

µPA869TD

µPA869TD-T3

• 8 mm wide embossed taping

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10460EJ01V0DS (1st edition)

Date Published January 2004 CP(K)

Printed in Japan



NEC Compound Semiconductor Devices 2004

12 3 4 5 6

中文翻译

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与UPA869TD相关器件

型号	品牌	获取价格	描述	数据表
UPA869TDFB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN,
UPA869TD-FB	RENESAS	获取价格	TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
UPA869TDFB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN,
UPA869TDFB-T3	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN,
UPA869TDFB-T3-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN,
UPA869TD-T3	RENESAS	获取价格	2 CHANNEL, L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD, M16, 1208, 6
UPA869TD-T3FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN,
UPA869TS	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN,
UPA869TSFB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN,
UPA869TSFB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN,

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