是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | THIN, ULTRA SUPER MINIMOLD PACKAGE-6 | Reach Compliance Code: | compliant |
风险等级: | 5.62 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.1 A | 基于收集器的最大容量: | 0.8 pF |
集电极-发射极最大电压: | 5.5 V | 配置: | SEPARATE, 2 ELEMENTS |
最高频带: | L BAND | JESD-30 代码: | R-PDSO-F6 |
JESD-609代码: | e6 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 6500 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA873TC-T1FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR | |
UPA873TC-T1FB-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR | |
UPA873TD | ETC |
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Discrete | |
UPA873TD-A | RENESAS |
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UPA873TD-A | |
UPA873TD-FB | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS M | |
UPA873TD-FB-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS M | |
UPA873TD-T3FB | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS M | |
UPA873TD-T3-FB | RENESAS |
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RF SMALL SIGNAL TRANSISTOR | |
UPA873TD-T3FB-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS M | |
UPA873TS-FB-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEAD |