Datasheet > UPA880TS-T3

UPA880TS-T3

更新时间： 2024-09-12 22:49:27

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
6页	54K
描述
NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE)

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中文翻译

获取价格

数据手册

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UPA880TS-T3 数据手册

PRELIMINARY DATA SHEET

NPN SiGe RF TWIN TRANSISTOR

µPA880TS

NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE)

FEATURES

•

2 different built-in transistors (NESG2046M33, NESG2107M33)

Q1: High gain SiGe transistor

f^T= 18 GHz TYP., S21e²= 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz

Q2: Low phase distortion SiGe transistor suited for OSC applications

f^T= 10 GHz TYP., S21e²= 9 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

6-pin super lead-less minimold (1007 package)

•

BUILT-IN TRANSISTORS

3-pin super lead-less minimold part No.

NESG2046M33

NESG2107M33

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

µPA880TS

µPA880TS-T3

50 pcs (Non reel)

10 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10462EJ01V0DS (1st edition)

Date Published January 2004 CP(K)

Printed in Japan



NEC Compound Semiconductor Devices 2004

12 3 4 5 6

中文翻译

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