是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | LEADLESS MINIMOLD PACKAGE-6 | Reach Compliance Code: | compliant |
风险等级: | 5.75 | 最大集电极电流 (IC): | 0.035 A |
基于收集器的最大容量: | 0.3 pF | 集电极-发射极最大电压: | 3.3 V |
配置: | SEPARATE, 2 ELEMENTS | 最高频带: | S BAND |
JESD-30 代码: | R-PDSO-F6 | JESD-609代码: | e0 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 21000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA892TD-T3FB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, S Band, Silicon, NPN, LEADLESS | |
UPA893TD | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-363VAR | |
UPA893TD-FB | NEC |
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RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS | |
UPA893TD-T3 | ETC |
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TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-363VAR | |
UPA893TD-T3FB | NEC |
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RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS | |
UPA895TD | CEL |
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NPN SILICON RF TWIN TRANSISTOR | |
UPA895TD | NEC |
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NPN SILICON RF TWIN TRANSISTOR | |
UPA895TD-FB | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS M | |
UPA895TD-FB | RENESAS |
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2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS, MINIMOLD, M16, 1208, 6 P | |
UPA895TD-T3 | NEC |
获取价格 |
NPN SILICON RF TWIN TRANSISTOR |