Datasheet > UPA895TD-T3-A

UPA895TD-T3-A

更新时间： 2024-09-15 03:04:39

品牌	Logo	应用领域
CEL		晶体晶体管射频
页数	文件大小	规格书
11页	234K
描述
NPN SILICON RF TWIN TRANSISTOR

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中文翻译

获取价格

数据手册

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UPA895TD-T3-A 数据手册

NEC's NPN SILICON RF

TWIN TRANSISTOR

UPA895TD

FEATURES

OUTLINE DIMENSIONS (Units in mm)

•

LOW VOLTAGE, LOW CURRENT OPERATION

SMALL PACKAGE OUTLINE:

1.2 mm x 0.8 mm

Package Outline TD

(TOP VIEW)

1.0±0.05

+0.07

-0.05

0.8

•

LOW HEIGHT PROFILE:

(Top View)

Just 0.50 mm high

TWO LOW NOISE OSCILLATOR TRANSISTORS:

NE851

IDEAL FOR 1-3 GHz OSCILLATORS

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

4. Base (Q2)

DESCRIPTION

NEC's UPA895TD contains two NE851 high frequency silicon

bipolar chips. The NE851 is an excellent oscillator chip, featur-

ing low 1/f noise and high immunity to pushing effects. NEC's

new ultra small TD package is ideal for all portable wireless

applications where reducing board space is a prime consider-

ation. Each transistor chip is independently mounted and

easily configured for oscillator/buffer amplifier and other

applications.

5. Emitter (Q2)

6. Base (Q1)

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKAGING

UPA895TD-T3-A

10K Pcs./Reel

Tape & Reel

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

UPA895TD

PACKAGE OUTLINE

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

600

145

DC Current Gain¹at VCE = 3 V, IC = 7 mA

100

5.0

120

6.5

0.6

4.0

5.5

Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz

Feedback Capacitance²at VCB = 3 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 1 V, IC =5 mA, f = 2 GHz

GHz

Cre

0.8

|S21E|²

3.0

4.5

|S21|S21E|²E|²Insertion Power GainIat VCE = 1 V, IC =15 mA, f = 2 GHz

NF Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

1.9

2.5

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to

guard pin of capacitances meter.

California Eastern Laboratories

12 3 4 5 6 7...11

中文翻译

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与UPA895TD-T3-A相关器件

型号	品牌	获取价格	描述	数据表
UPA895TD-T3FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS M
UPA895TD-T3-FB	RENESAS	获取价格	2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS, MINIMOLD, M16, 1208, 6 P
UPA895TD-T3FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS M
UPA895TS	RENESAS	获取价格	2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER LEADLESS MINIMOLD PACKAGE-6
UPA895TS	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEAD
UPA895TS-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEAD
UPA895TS-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEAD
UPA895TS-T3	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEAD
UPA895TS-T3FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEAD
UPA895TS-T3FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEAD

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