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UPA895TS-T3 PDF预览

UPA895TS-T3

更新时间: 2024-11-05 21:03:07
品牌 Logo 应用领域
日电电子 - NEC 光电二极管晶体管
页数 文件大小 规格书
7页 44K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6

UPA895TS-T3 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.63
最大集电极电流 (IC):0.1 A基于收集器的最大容量:0.8 pF
集电极-发射极最大电压:5.5 V配置:SEPARATE, 2 ELEMENTS
最高频带:L BANDJESD-30 代码:R-PDSO-F6
JESD-609代码:e0元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):6500 MHz
Base Number Matches:1

UPA895TS-T3 数据手册

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DATA SHEET  
NPN SILICON RF TWIN TRANSISTOR  
µPA895TS  
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)  
IN A 6-PIN SUPER LEAD-LESS MINIMOLD  
FEATURES  
Built-in low voltage operation, low phase distortion transistor suited for OSC applications  
fT = 4.5 GHz TYP., S21e 2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz  
Built-in 2 transistors (2 × 2SC5800)  
6-pin super lead-less minimold package  
BUILT-IN TRANSISTORS  
Q1, Q2  
Flat-lead 3-pin thin-type ultra super minimold part No.  
2SC5800  
ORDERING INFORMATION  
Part Number  
Quantity  
50 pcs (Non reel)  
10 kpcs/reel  
Supplying Form  
µPA895TS  
µPA895TS-T3  
• 8 mm wide embossed taping  
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10335EJ02V0DS (2nd edition)  
Date Published September 2003 CP(K)  
Printed in Japan  
The mark  shows major revised points.  
NEC Compound Semiconductor Devices 2002, 2003  

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