Datasheet > UPA901TU

UPA901TU

更新时间： 2024-11-06 01:12:43

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
9页	571K
描述
NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD

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UPA901TU 数据手册

DATA SHEET

NEC's NPN SiGe RF IC

IN A 8-PIN LEAD-LESS MINIMOLD

UPA901TU

FEATURES

DESCRIPTION

•

OUTPUT POWER:

NEC's UPA901TU is a silicon germanium HBT IC designed

for the power ampliﬁer of 5.8 GHz cordless phone and other

5.8 GHz applications. This IC consists of two stage ampliﬁers

and has excellent performance, high efﬁciency, high gain,

low power consumption.

Pout = 19 dBm @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz

LOW POWER:

IC = 90 mA @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz

SINGLE POWER SUPPLY OPERATION:

VCE = 3.6 V

•

BUILT-IN BIAS CIRCUIT

NEC's UPA901TU is packaged in surface mount 8-pin lead-

less minimold plastic package.

8-PIN LEAD-LESS MINIMOLD:

(2.0 × 2.2 × 0.5 mm)

This device is fabricated with our SiGe HBT process UHS2-

HV technology.

APPLICATIONS

•

5.8 GHz Cordless Phones

5.8 GHz Band DSRC (Dedicated Short Range

Communication) System

•

5 GHz Band Video Transmitter

ORDERING INFORMATION

PART NUMBER

ORDER NUMBER

QUANTITY

PACKAGE

MARKING

SUPPLYING FORM

8-pin lead-less

• 8 mm wide embossed taping

UPA901TU

UPA901TU-A

50 pcs (Non reel)

5 kpcs/reel

A901

minimold( Pb-Free)

UPA901TU-T3

UPA901TU-T3-A

• Pin 1, Pin 8 face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales ofﬁce.

The unit sample quantity is 50 pcs.

California Eastern Laboratories

12 3 4 5 6 7...9

中文翻译

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