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UPA873TD-FB PDF预览

UPA873TD-FB

更新时间: 2024-01-20 13:38:00
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
17页 92K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6

UPA873TD-FB 数据手册

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DATA SHEET  
NPN SILICON RF TWIN TRANSISTOR  
µPA873TD  
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)  
IN A 6-PIN LEAD-LESS MINIMOLD  
FEATURES  
Built-in low phase distortion transistor suited for OSC applications  
fT = 4.5 GHz TYP., S21e 2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz  
Built-in 2 transistors (2 × 2SC5800)  
6-pin lead-less minimold package  
BUILT-IN TRANSISTORS  
Q1, Q2  
3-pin thin-type ultra super minimold part No.  
2SC5800  
ORDERING INFORMATION  
Part Number  
Quantity  
50 pcs (Non reel)  
10 kpcs/reel  
Supplying Form  
µPA873TD  
µPA873TD-T3  
• 8 mm wide embossed taping  
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10151EJ01V0DS (1st edition)  
Date Published April 2002 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2002  

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