是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.8 |
最大集电极电流 (IC): | 0.04 A | 基于收集器的最大容量: | 0.4 pF |
集电极-发射极最大电压: | 5 V | 配置: | SEPARATE, 2 ELEMENTS |
最高频带: | L BAND | JESD-30 代码: | R-PDSO-F6 |
JESD-609代码: | e0 | 元件数量: | 2 |
端子数量: | 6 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON GERMANIUM |
标称过渡频率 (fT): | 18000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA880TSFB-A | NEC |
获取价格 |
暂无描述 | |
UPA880TSFB-T3 | NEC |
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RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN, | |
UPA880TSFB-T3-A | NEC |
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RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN, | |
UPA880TS-T3 | NEC |
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NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (10 | |
UPA891TC | ETC |
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Discrete | |
UPA891TC-FB | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR | |
UPA891TC-FB-A | RENESAS |
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2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, ULTRA SUPER MINIMOLD PACKAGE | |
UPA891TC-T1FB | RENESAS |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR | |
UPA891TC-T1FB | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR | |
UPA891TC-T1FB-A | RENESAS |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR |