Datasheet > UPA869TS

UPA869TS

更新时间： 2023-01-03 00:57:29

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	80K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN, SUPER LEADLESS MINIMOLD, 1007, 6 PIN

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中文翻译

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数据手册

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UPA869TS 数据手册

PRELIMINARY DATA SHEET

NPN SILICON + SiGe RF TWIN TRANSISTOR

µPA869TS

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE)

FEATURES

•

2 different built-in transistors (NESG2046M33, 2SC5800)

Q1: High gain SiGe transistor

f^T= 18 GHz TYP., S21e²= 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz

Q2: Low phase distortion transistor suited for OSC applications

f^T= 6.5 GHz TYP., S21e²= 5.5 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz

6-pin super lead-less minimold (1007 package)

•

BUILT-IN TRANSISTORS

−

3-pin super lead-less minimold part No.

NESG2046M33

3-pin thin-type ultra super minimold part No.

−

2SC5800

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

10 kpcs/reel

Supplying Form

µPA869TS

µPA869TS-T3

• 8 mm wide embossed taping

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10461EJ01V0DS (1st edition)

Date Published January 2004 CP(K)

Printed in Japan



NEC Compound Semiconductor Devices 2004

12 3 4 5 6

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UPA869TSFB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN,
UPA869TSFB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN,
UPA869TSFB-T3	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN,
UPA869TSFB-T3-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN,
UPA869TS-T3	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN,
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