Datasheet > UPA872TD-T3

UPA872TD-T3

更新时间： 2024-02-19 17:35:58

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
16页	86K
描述
TRANSISTOR \| BJT \| PAIR \| NPN \| 5.5V V(BR)CEO \| 100MA I(C) \| SOT-363VAR

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中文翻译

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数据手册

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UPA872TD-T3 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA872TD

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD

FEATURES

•

Built-in low voltage operation, low phase distortion transistor suited for OSC operation

f^T= 5.5 GHz TYP., S^21e²= 4.0 dB TYP. @ V^CE= 1 V, I^C= 10 mA, f = 2 GHz

Built-in 2 transistors (2 × 2SC5676)

•

6-pin lead-less minimold package

BUILT-IN TRANSISTORS

Q1, Q2

3-pin thin-type ultra super minimold part No.

2SC5676

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

10 kpcs/reel

Supplying Form

µPA872TD

µPA872TD-T3

• 8 mm wide embossed taping

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

5.5

1.5

100

tot ^Note

190 in 1 element

210 in 2 elements

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy substrate

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15362EJ1V0DS00 (1st edition)

Date Published April 2001 NS CP(K)

Printed in Japan

2001

12 3 4 5 6 7...16

中文翻译

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