Datasheet > UPA867TS-T3-A

UPA867TS-T3-A

更新时间： 2024-01-28 00:46:24

品牌	Logo	应用领域
日电电子 - NEC		ISM频段光电二极管晶体管
页数	文件大小	规格书
6页	57K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon Germanium, NPN, LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6

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技术参数
数据手册

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UPA867TS-T3-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	LEAD FREE, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6	Reach Compliance Code：	compliant
风险等级：	5.72	最大集电极电流 (IC)：	0.03 A
基于收集器的最大容量：	0.7 pF	集电极-发射极最大电压：	6 V
配置：	SEPARATE, 2 ELEMENTS	最高频带：	S BAND
JESD-30 代码：	R-PDSO-F6	JESD-609代码：	e6
湿度敏感等级：	1	元件数量：	2
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN BISMUTH	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	10
晶体管元件材料：	SILICON GERMANIUM	标称过渡频率 (fT)：	12000 MHz
Base Number Matches：	1

UPA867TS-T3-A 数据手册

DATA SHEET

NPN SILICON + SiGe RF TWIN TRANSISTOR

µPA867TS

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG)

FEATURES

•

2 different built-in transistors (2SC5435, NESG2107M33)

Q1: High gain transistor

f^T= 12.0 GHz TYP., S21e²= 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

Q2: Built-in low phase noise SiGe transistor suited for OSC applications

f^T= 10.0 GHz TYP., S21e²= 9.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

6-pin super lead-less minimold package (1007 PKG)

•

BUILT-IN TRANSISTORS

2SC5435

−

Flat-lead 3-pin thin-type ultra super minimold part No.

3-pin super lead-less minimold part No.

−

NESG2107M33

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

µPA867TS

µPA867TS-A

6-pin super lead-less

minimold package

(1007 PKG) (Pb-Free)^Note

50 pcs

• 8 mm wide embossed taping

(Non reel)

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the

perforation side of the tape

µPA867TS-T3

µPA867TS-T3-A

10 kpcs/reel

Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10423EJ02V0DS (2nd edition)

Date Published September 2005 CP(K)

Printed in Japan

The mark shows major revised points.



NEC Compound Semiconductor Devices, Ltd. 2003, 2005

12 3 4 5 6

中文翻译

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与UPA867TS-T3-A相关器件

型号	品牌	获取价格	描述	数据表
UPA867TS-T3-A-FB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
UPA867TS-T3FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN,
UPA868TS-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon Germanium, NPN,
UPA868TS-T3-A	RENESAS	获取价格	2 CHANNEL, S BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, 1007, SUPER LEADLESS
UPA868TS-T3-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon Germanium, NPN,
UPA869TD	RENESAS	获取价格	2 CHANNEL, L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD, M16, 1208, 6
UPA869TD	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon Germanium, NPN,
UPA869TDFB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN,
UPA869TD-FB	RENESAS	获取价格	TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
UPA869TDFB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN,

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