Datasheet > UPA862TD-T3-A

UPA862TD-T3-A

更新时间： 2024-10-01 02:57:43

品牌	Logo	应用领域
CEL		晶体晶体管射频光电二极管 ISM频段放大器
页数	文件大小	规格书
12页	255K
描述
NPN SILICON RF TWIN TRANSISTOR

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中文翻译

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数据手册

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UPA862TD-T3-A 数据手册

NEC's NPN SILICON RF

TWIN TRANSISTOR

UPA862TD

FEATURES

OUTLINE DIMENSIONS (Units in mm)

•

LOW VOLTAGE, LOW CURRENT OPERATION

SMALL PACKAGE OUTLINE:

1.2 mm x 0.8 mm

Package Outline TD

(TOP VIEW)

1.0±0.05

+0.07

-0.05

0.8

•

LOW HEIGHT PROFILE:

(Top View)

Just 0.50 mm high

TWO DIFFERENT DIE TYPES:

Q1 - Ideal buffer amplifier transistor

Q2 - Ideal oscillator transistor

•

IDEAL FOR 1-2 GHz OSCILLATORS

DESCRIPTION

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

4. Base (Q2)

NEC's UPA862TD contains one NE851 and one NE685 NPN

high frequency silicon bipolar chip. The NE851 is an excellent

oscillator chip, featuring low 1/f noise and high immunity to

pushing effects. The NE685 is an excellent buffer transistor,

featuring low noise and high gain. NEC's new ultra small TD

package is ideal for all portable wireless applications where

reducingboardspaceisaprimeconsideration. Eachtransistor

chip is independently mounted and easily configured for oscil-

lator/buffer amplifier and other applications.

5. Emitter (Q2)

6. Base (Q1)

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

UPA862TD

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 5 V, IE = 0

100

150

Emitter Cutoff Current at VEB = 1 V, IC = 0

DC Current Gain¹at VCE = 3 V, IC = 10 mA

110

Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz

Feedback Capacitance²at VCB = 3 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz

Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz

GHz

Cre

0.4

8.5

1.5

0.7

2.5

|S21E|²

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

600

145

DC Current Gain¹at VCE = 3 V, IC = 7 mA

100

5.0

120

6.5

0.6

4.0

5.5

Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz

Feedback Capacitance²at VCB = 3 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 1 V, IC =5 mA, f = 2 GHz

GHz

Cre

0.8

2.5

|S21E|²

3.0

4.5

|S21|S21E|²E|²Insertion Power GainIat VCE = 1 V, IC =15 mA, f = 2 GHz

NF Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz

1.9

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to

guard pin of capacitances meter.

California Eastern Laboratories

12 3 4 5 6 7...12

中文翻译

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与UPA862TD-T3-A相关器件

型号	品牌	获取价格	描述	数据表
UPA862TD-T3-A-FB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
UPA862TD-T3-A-YFB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
UPA862TD-T3FB	RENESAS	获取价格	2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-6
UPA862TD-T3FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS
UPA862TS-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEA
UPA862TS-T3FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEA
UPA863TC	ETC	获取价格	Discrete
UPA863TC-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, ULTRA SUP
UPA863TC-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, ULTRA SUP
UPA863TC-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, ULTRA SUP

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