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UPA862TC-FB

更新时间： 2024-01-16 20:06:08
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管
页数 文件大小 规格书
11页 136K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6

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UPA862TC-FB 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.62
最大集电极电流 (IC)：0.03 A基于收集器的最大容量：0.7 pF
集电极-发射极最大电压：6 V配置：SEPARATE, 2 ELEMENTS
最高频带：L BANDJESD-30 代码：R-PDSO-F6
JESD-609代码：e6元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：TIN BISMUTH端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：12000 MHzBase Number Matches：1

UPA862TC-FB 数据手册

 浏览型号UPA862TC-FB的Datasheet PDF文件第2页浏览型号UPA862TC-FB的Datasheet PDF文件第3页浏览型号UPA862TC-FB的Datasheet PDF文件第4页浏览型号UPA862TC-FB的Datasheet PDF文件第5页浏览型号UPA862TC-FB的Datasheet PDF文件第6页浏览型号UPA862TC-FB的Datasheet PDF文件第7页 
NEC's NPN SILICON RF  
TWIN TRANSISTOR  
UPA862TD  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
•
•
LOW VOLTAGE, LOW CURRENT OPERATION  
SMALL PACKAGE OUTLINE:  
1.2 mm x 0.8 mm  
Package Outline TD  
(TOP VIEW)  
1.0±0.05  
+0.07  
-0.05  
0.8  
•
•
LOW HEIGHT PROFILE:  
(Top View)  
Q1  
Just 0.50 mm high  
C1  
E1  
C2  
B1  
E2  
B2  
1
2
3
6
5
4
TWO DIFFERENT DIE TYPES:  
Q1 - Ideal buffer amplifier transistor  
Q2 - Ideal oscillator transistor  
•
IDEAL FOR 1-2 GHz OSCILLATORS  
Q2  
DESCRIPTION  
PIN CONNECTIONS  
1. Collector (Q1)  
2. Emitter (Q1)  
3. Collector (Q2)  
4. Base (Q2)  
NEC's UPA862TD contains one NE851 and one NE685 NPN  
high frequency silicon bipolar chip. The NE851 is an excellent  
oscillator chip, featuring low 1/f noise and high immunity to  
pushing effects. The NE685 is an excellent buffer transistor,  
featuring low noise and high gain. NEC's new ultra small TD  
package is ideal for all portable wireless applications where  
reducingboardspaceisaprimeconsideration. Eachtransistor  
chip is independently mounted and easily configured for oscil-  
lator/buffer amplifier and other applications.  
5. Emitter (Q2)  
6. Base (Q1)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
UPA862TD  
TD  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
nA  
MIN  
TYP  
MAX  
ICBO  
IEBO  
hFE  
Collector Cutoff Current at VCB = 5 V, IE = 0  
100  
100  
150  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
nA  
DC Current Gain1 at VCE = 3 V, IC = 10 mA  
75  
10  
110  
12  
fT  
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz  
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz  
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz  
GHz  
pF  
Cre  
|S21E|2  
0.4  
8.5  
1.5  
0.7  
2.5  
dB  
7
NF  
dB  
ICBO  
IEBO  
hFE  
Collector Cutoff Current at VCB = 10 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
nA  
nA  
600  
600  
145  
DC Current Gain1 at VCE = 3 V, IC = 7 mA  
100  
5.0  
120  
6.5  
0.6  
4.0  
5.5  
fT  
Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz  
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 1 V, IC =5 mA, f = 2 GHz  
GHz  
pF  
Cre  
|S21E|2  
0.8  
2.5  
dB  
3.0  
4.5  
|S21|S21E|2E|2 Insertion Power GainIat VCE = 1 V, IC =15 mA, f = 2 GHz  
dB  
NF Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz  
dB  
1.9  
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.  
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to  
guard pin of capacitances meter.  
California Eastern Laboratories  
1234567...11

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