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UPA861TC-FB PDF预览

UPA861TC-FB

更新时间: 2024-01-03 06:44:51
品牌 Logo 应用领域
日电电子 - NEC 放大器光电二极管晶体管
页数 文件大小 规格书
28页 143K
描述
2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, ULTRA SUPER MINIMOLD PACKAGE-6

UPA861TC-FB 数据手册

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DATA SHEET  
NPN SILICON RF TWIN TRANSISTOR  
µPA861TC  
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)  
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD  
FEATURES  
Low voltage operation  
2 different built-in transistors (2SC5436, 2SC5786)  
Q1: High-gain transistor  
fT = 12.0 GHz TYP., S21e 2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz  
Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications  
fT = 20.0 GHz TYP., S21e 2 = 12.0 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz  
NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt  
Flat-lead 6-pin thin-type ultra super minimold package  
BUILT-IN TRANSISTORS  
Q1  
Q2  
3-pin thin-type ultra super minimold part No.  
2SC5436  
2SC5786  
ORDERING INFORMATION  
Part Number  
Quantity  
50 pcs (Non reel)  
3 kpcs/reel  
Supplying Form  
• 8 mm wide embossed taping  
µPA861TC  
µPA861TC-T1  
• Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)  
face the perforation side of the tape  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10049EJ01V0DS (1st edition)  
Date Published November 2001 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2001  

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