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UPA861TD-FB PDF预览

UPA861TD-FB

更新时间： 2024-02-25 08:22:14
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管射频
页数 文件大小 规格书
10页 130K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD PACKAGE-6

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UPA861TD-FB 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：MINIMOLD PACKAGE-6Reach Compliance Code：compliant
风险等级：5.84最大集电极电流 (IC)：0.03 A
基于收集器的最大容量：0.8 pF集电极-发射极最大电压：3 V
配置：SEPARATE, 2 ELEMENTS最高频带：L BAND
JESD-30 代码：R-PDSO-F6JESD-609代码：e6
湿度敏感等级：1元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：TIN BISMUTH端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：10
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：12000 MHz

UPA861TD-FB 数据手册

 浏览型号UPA861TD-FB的Datasheet PDF文件第2页浏览型号UPA861TD-FB的Datasheet PDF文件第3页浏览型号UPA861TD-FB的Datasheet PDF文件第4页浏览型号UPA861TD-FB的Datasheet PDF文件第5页浏览型号UPA861TD-FB的Datasheet PDF文件第6页浏览型号UPA861TD-FB的Datasheet PDF文件第7页 
NEC's NPN SILICON  
RF TWIN TRANSISTOR  
UPA861TD  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
•
•
•
LOW VOLTAGE, LOW CURRENT OPERATION  
LOW CAPACITANCE FOR WIDE TUNING RANGE  
Package Outline TD  
(TOP VIEW)  
1.0±0.05  
SMALL PACKAGE OUTLINE:  
1.2 mm x 0.8 mm  
+0.07  
-0.05  
0.8  
(Top View)  
Q1  
•
•
LOW HEIGHT PROFILE:  
Just 0.50 mm high  
C1  
E1  
C2  
B1  
E2  
B2  
1
2
3
6
5
4
TWO DIFFERENT DIE TYPES:  
Q1 - Ideal buffer amplifier transistor  
Q2 - Ideal oscillator transistor  
Q2  
•
IDEAL FOR >3 GHz OSCILLATORS  
PIN CONNECTIONS  
1. Collector (Q1)  
2. Emitter (Q1)  
3. Collector (Q2)  
4. Base (Q2)  
DESCRIPTION  
NEC's UPA861TD contains one NE894 and one NE687 NPN  
high frequency silicon bipolar chip. The NE894 is an excellent  
oscillator chip, featuring high fT and low current, low voltage  
operation. The NE687 is an excellent buffer transistor, featur-  
inglownoiseandhighgain. NEC'snewultrasmallTDpackage  
is ideal for all portable wireless applications where reducing  
board space is a prime consideration. Each transistor chip is  
independently mounted and easily configured for oscillator/  
buffer amplifier and other applications.  
5. Emitter (Q2)  
6. Base (Q1)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
UPA861TD  
TD  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
nA  
MIN  
TYP  
MAX  
100  
100  
140  
ICBO  
IEBO  
hFE  
Collector Cutoff Current at VCB = 5 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
nA  
DC Current Gain1 at VCE = 1 V, IC = 10 mA  
70  
110  
12.0  
0.4  
fT  
Gain Bandwidth at VCE = 1 V, IC = 10 mA, f = 2 GHz  
Feedback Capacitance2 at VCB = 0.5 V, IE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 1 V, IC =10 mA, f = 2 GHz  
Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz  
GHz  
pF  
10.0  
Cre  
|S21E|2  
0.8  
dB  
7.0  
9.0  
NF  
dB  
1.5  
2.0  
ICBO  
IEBO  
hFE  
fT  
Collector Cutoff Current at VCB = 5 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
nA  
nA  
100  
100  
100  
DC Current Gain1 at VCE = 1 V, IC = 5 mA  
50  
75  
Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz  
Feedback Capacitance2 at VCB = 0.5 V, IE = 0, f = 1 MHz  
GHz  
pF  
17.0  
20.0  
0.22  
13.0  
1.4  
Cre  
0.30  
2.5  
|S21E|2E|2 Insertion Power GainIat VCE = 1 V, IC = 20 mA, f = 2 GHz  
NF Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, Zs = Zopt  
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.  
dB  
11.0  
dB  
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to  
guard pin of capacitances meter.  
California Eastern Laboratories  
1234567...10

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