NEC's NPN SILICON
RF TWIN TRANSISTOR
UPA861TD
FEATURES
OUTLINE DIMENSIONS (Units in mm)
•
•
•
LOW VOLTAGE, LOW CURRENT OPERATION
LOW CAPACITANCE FOR WIDE TUNING RANGE
Package Outline TD
(TOP VIEW)
1.0±0.05
SMALL PACKAGE OUTLINE:
1.2 mm x 0.8 mm
+0.07
-0.05
0.8
(Top View)
Q1
•
•
LOW HEIGHT PROFILE:
Just 0.50 mm high
C1
E1
C2
B1
E2
B2
1
2
3
6
5
4
TWO DIFFERENT DIE TYPES:
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
Q2
•
IDEAL FOR >3 GHz OSCILLATORS
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
DESCRIPTION
NEC's UPA861TD contains one NE894 and one NE687 NPN
high frequency silicon bipolar chip. The NE894 is an excellent
oscillator chip, featuring high fT and low current, low voltage
operation. The NE687 is an excellent buffer transistor, featur-
inglownoiseandhighgain. NEC'snewultrasmallTDpackage
is ideal for all portable wireless applications where reducing
board space is a prime consideration. Each transistor chip is
independently mounted and easily configured for oscillator/
buffer amplifier and other applications.
5. Emitter (Q2)
6. Base (Q1)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA861TD
TD
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
nA
MIN
TYP
MAX
100
100
140
ICBO
IEBO
hFE
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
DC Current Gain1 at VCE = 1 V, IC = 10 mA
70
110
12.0
0.4
fT
Gain Bandwidth at VCE = 1 V, IC = 10 mA, f = 2 GHz
Feedback Capacitance2 at VCB = 0.5 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 1 V, IC =10 mA, f = 2 GHz
Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz
GHz
pF
10.0
Cre
|S21E|2
0.8
dB
7.0
9.0
NF
dB
1.5
2.0
ICBO
IEBO
hFE
fT
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
nA
100
100
100
DC Current Gain1 at VCE = 1 V, IC = 5 mA
50
75
Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz
Feedback Capacitance2 at VCB = 0.5 V, IE = 0, f = 1 MHz
GHz
pF
17.0
20.0
0.22
13.0
1.4
Cre
0.30
2.5
|S21E|2E|2 Insertion Power GainIat VCE = 1 V, IC = 20 mA, f = 2 GHz
NF Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, Zs = Zopt
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
dB
11.0
dB
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
California Eastern Laboratories