是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.74 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.03 A |
基于收集器的最大容量: | 0.8 pF | 集电极-发射极最大电压: | 3 V |
配置: | SEPARATE, 2 ELEMENTS | 最高频带: | L BAND |
JESD-30 代码: | R-PDSO-F6 | JESD-609代码: | e0 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 12000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA861TC-FB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT | |
UPA861TC-T1FB | RENESAS |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT | |
UPA861TC-T1FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT | |
UPA861TC-T1FB-A | RENESAS |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT | |
UPA861TC-T1FB-A | NEC |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT | |
UPA861TD | CEL |
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NPN SILICON RF TWIN TRANSISTOR | |
UPA861TD | NEC |
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NECs NPN SILICON RF TWIN TRANSISTOR | |
UPA861TD | RENESAS |
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RF SMALL SIGNAL TRANSISTOR | |
UPA861TD-FB | NEC |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD | |
UPA861TD-T3 | NEC |
获取价格 |
NECs NPN SILICON RF TWIN TRANSISTOR |