Datasheet > UPA860TD-T3FB

UPA860TD-T3FB

更新时间： 2024-02-02 09:08:16

品牌	Logo	应用领域
日电电子 - NEC		放大器光电二极管晶体管
页数	文件大小	规格书
33页	162K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6

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技术参数
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UPA860TD-T3FB 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.14
最大集电极电流 (IC)：	0.03 A	基于收集器的最大容量：	0.7 pF
集电极-发射极最大电压：	6 V	配置：	SEPARATE, 2 ELEMENTS
最高频带：	S BAND	JESD-30 代码：	R-PDSO-F6
元件数量：	2	端子数量：	6
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	12000 MHz
Base Number Matches：	1

UPA860TD-T3FB 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA860TD

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD

FEATURES

•

Low voltage operation

2 different built-in transistors (2SC5435, 2SC5786)

Q1: High-gain transistor

f^T= 12.0 GHz TYP., S^21e²= 8.5 dB TYP. @ V^CE= 3 V, I^C= 10 mA, f = 2 GHz

Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications

f^T= 20.0 GHz TYP., S^21e²= 13.0 dB TYP. @ V^CE= 1 V, I^C= 20 mA, f = 2 GHz

NF = 1.4 dB TYP. @ V^CE= 1 V, I^C= 5 mA, f = 2 GHz, Z^S= Z^opt

6-pin lead-less minimold package

•

BUILT-IN TRANSISTORS

3-pin thin-type ultra super minimold part No.

2SC5435

2SC5786

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

10 kpcs/reel

Supplying Form

µPA860TD

µPA860TD-T3

• 8 mm wide embossed taping

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10067EJ01V0DS (1st edition)

Date Published January 2002 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2002

12 3 4 5 6 7...33

中文翻译

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与UPA860TD-T3FB相关器件

型号	品牌	获取价格	描述	数据表
UPA860TD-T3-FB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
UPA860TD-T3FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon, NPN, LEADLESS
UPA861TC	ETC	获取价格	Discrete
UPA861TC-FB	RENESAS	获取价格	2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, ULTRA SUPER MINIMOLD PACKAGE
UPA861TC-FB	NEC	获取价格	2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, ULTRA SUPER MINIMOLD PACKAGE
UPA861TC-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA861TC-T1FB	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA861TC-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA861TC-T1FB-A	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA861TC-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT

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