5秒后页面跳转
UPA854TD-A PDF预览

UPA854TD-A

更新时间: 2023-06-15 00:00:00
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
33页 163K
描述
TRANSISTOR,BJT,PAIR,NPN,6V V(BR)CEO,100MA I(C),SOT-363VAR

UPA854TD-A 数据手册

 浏览型号UPA854TD-A的Datasheet PDF文件第2页浏览型号UPA854TD-A的Datasheet PDF文件第3页浏览型号UPA854TD-A的Datasheet PDF文件第4页浏览型号UPA854TD-A的Datasheet PDF文件第5页浏览型号UPA854TD-A的Datasheet PDF文件第6页浏览型号UPA854TD-A的Datasheet PDF文件第7页 
DATA SHEET  
NPN SILICON RF TWIN TRANSISTOR  
µPA854TD  
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)  
IN A 6-PIN LEAD-LESS MINIMOLD  
FEATURES  
Low voltage operation  
2 different built-in transistors (2SC5435, 2SC5745)  
Q1: High gain transistor  
fT = 12.0 GHz TYP., S21e 2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz  
Q2: Low phase distortion transistor suited for OSC operation  
fT = 5.5 GHz TYP., S21e 2 = 4.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz  
6-pin lead-less minimold package  
BUILT-IN TRANSISTORS  
Q1  
Q2  
3-pin thin-type ultra super minimold part No.  
2SC5435  
2SC5745  
ORDERING INFORMATION  
Part Number  
Quantity  
50 pcs (Non reel)  
10 kpcs/reel  
Supplying Form  
µPA854TD  
µPA854TD-T3  
• 8 mm wide embossed taping  
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10010EJ01V0DS (1st edition)  
Date Published November 2001 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2001  

与UPA854TD-A相关器件

型号 品牌 获取价格 描述 数据表
UPA854TD-FB NEC

获取价格

RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD
UPA854TD-FB-A NEC

获取价格

RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD
UPA854TD-T3-A RENESAS

获取价格

TRANSISTOR,BJT,PAIR,NPN,6V V(BR)CEO,100MA I(C),SOT-363VAR
UPA854TD-T3FB NEC

获取价格

RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD
UPA854TD-T3FB-A NEC

获取价格

RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD
UPA855TC-FB NEC

获取价格

RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA855TC-T1FB NEC

获取价格

RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA855TD RENESAS

获取价格

RF SMALL SIGNAL TRANSISTOR
UPA855TD-T3-FB RENESAS

获取价格

RF SMALL SIGNAL TRANSISTOR
UPA858TD ETC

获取价格

TRANSISTOR | BJT | PAIR | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-363VAR