是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PDSO-F6 | 针数: | 6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.31 | 最大集电极电流 (IC): | 0.03 A |
基于收集器的最大容量: | 0.7 pF | 集电极-发射极最大电压: | 6 V |
配置: | SEPARATE, 2 ELEMENTS | 最高频带: | L BAND |
JESD-30 代码: | R-PDSO-F6 | JESD-609代码: | e6 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 12000 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA855TC-FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT | |
UPA855TC-T1FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT | |
UPA855TD | RENESAS |
获取价格 |
RF SMALL SIGNAL TRANSISTOR | |
UPA855TD-T3-FB | RENESAS |
获取价格 |
RF SMALL SIGNAL TRANSISTOR | |
UPA858TD | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-363VAR | |
UPA858TD-FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS | |
UPA858TD-T3 | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-363VAR | |
UPA858TD-T3FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS | |
UPA859TD | ETC |
获取价格 |
Discrete | |
UPA860TC | ETC |
获取价格 |
Discrete |