是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.8 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.1 A | 最小直流电流增益 (hFE): | 70 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.21 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA855TD-T3-FB | RENESAS |
获取价格 |
RF SMALL SIGNAL TRANSISTOR | |
UPA858TD | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-363VAR | |
UPA858TD-FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS | |
UPA858TD-T3 | ETC |
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TRANSISTOR | BJT | PAIR | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-363VAR | |
UPA858TD-T3FB | NEC |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS | |
UPA859TD | ETC |
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Discrete | |
UPA860TC | ETC |
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Discrete | |
UPA860TD | ETC |
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Discrete | |
UPA860TD-A | RENESAS |
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UPA860TD-A | |
UPA860TD-FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon, NPN, LEADLESS |