生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.03 A |
基于收集器的最大容量: | 1 pF | 集电极-发射极最大电压: | 3 V |
配置: | SEPARATE, 2 ELEMENTS | 最高频带: | L BAND |
JESD-30 代码: | R-PDSO-F6 | 元件数量: | 2 |
端子数量: | 6 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 12000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA858TD-FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS | |
UPA858TD-T3 | ETC |
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TRANSISTOR | BJT | PAIR | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-363VAR | |
UPA858TD-T3FB | NEC |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS | |
UPA859TD | ETC |
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Discrete | |
UPA860TC | ETC |
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Discrete | |
UPA860TD | ETC |
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Discrete | |
UPA860TD-A | RENESAS |
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UPA860TD-A | |
UPA860TD-FB | NEC |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon, NPN, LEADLESS | |
UPA860TD-FB-A | NEC |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, S Band, Silicon, NPN, LEADLESS | |
UPA860TD-T3 | RENESAS |
获取价格 |
RF SMALL SIGNAL TRANSISTOR |