Datasheet > UPA842TC-T1

UPA842TC-T1

更新时间： 2024-01-06 04:50:38

品牌	Logo	应用领域
日电电子 - NEC		光电二极管晶体管
页数	文件大小	规格书
28页	141K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UPA842TC-T1 技术参数

生命周期：	Obsolete	包装说明：	ULTRA SUPER MINIMOLD PACKAGE-6
Reach Compliance Code：	unknown	风险等级：	5.72
最大集电极电流 (IC)：	0.03 A	基于收集器的最大容量：	0.8 pF
集电极-发射极最大电压：	3 V	配置：	SEPARATE, 2 ELEMENTS
最高频带：	L BAND	JESD-30 代码：	R-PDSO-F6
元件数量：	2	端子数量：	6
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	11000 MHz	Base Number Matches：	1

UPA842TC-T1 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA842TC

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

•

Flat-lead 6-pin thin-type ultra super minimold package

2 different built-in transistors (2SC5436, 2SC5600)

Q1: Built-in low noise transistor

NF = 1.3 dB TYP. @ V^CE= 1 V, I^C= 3 mA, f = 2 GHz

Q2: Built-in low phase distortion transistor suited for OSC operation

f^T= 5.0 GHz TYP., S^21e²= 4.0 dB TYP. @ V^CE= 1 V, I^C= 5 mA, f = 2 GHz

BUILT-IN TRANSISTORS

3-pin thin-type ultra super minimold part No.

2SC5436

2SC5600

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

3 kpcs/reel

Supplying Form

• 8 mm wide embossed taping

µPA842TC

µPA842TC-T1

• Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)

face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15202EJ1V0DS00 (1st edition)

Date Published December 2000 NS CP(K)

Printed in Japan

2000

12 3 4 5 6 7...28

中文翻译

下载PDF

与UPA842TC-T1相关器件

型号	品牌	获取价格	描述	数据表
UPA842TC-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN,
UPA843TC	NEC	获取价格	NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA S
UPA843TCFB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR
UPA843TCFB-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR
UPA843TC-T1	NEC	获取价格	NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA S
UPA843TC-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, L Band, Silicon, NPN, ULTRA SU
UPA843TD	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| NPN \| 6V V(BR)CEO \| 210MA I(C) \| TSOP
UPA843TD-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS
UPA843TD-T3	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| NPN \| 6V V(BR)CEO \| 210MA I(C) \| TSOP
UPA843TD-T3FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS

与UPA842TC-T1相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

5
PMOS管背靠背连接：串联还是并联？
2024-06-28

7
高压电解电容的分类与选型策略
2024-06-28

8
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

13

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA842TC-T1

UPA842TC-T1 技术参数

UPA842TC-T1 数据手册

与UPA842TC-T1相关器件

与UPA842TC-T1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA842TC-T1

UPA842TC-T1 技术参数

UPA842TC-T1 数据手册

与UPA842TC-T1相关器件

与UPA842TC-T1相关文章

您还可以找

您在本页遇到什么问题？