生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.67 |
最大集电极电流 (IC): | 0.03 A | 最小直流电流增益 (hFE): | 75 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.21 W | 子类别: | Other Transistors |
表面贴装: | YES | 标称过渡频率 (fT): | 3500 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA841TD-T3 | RENESAS |
获取价格 |
RF SMALL SIGNAL TRANSISTOR |
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UPA841TD-T3-FB | RENESAS |
获取价格 |
RF SMALL SIGNAL TRANSISTOR |
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UPA842TC | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, |
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UPA842TC-FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, |
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UPA842TC-T1 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, |
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UPA842TC-T1FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, |
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UPA843TC | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA S |
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UPA843TCFB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR |
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UPA843TCFB-T1 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR |
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UPA843TC-T1 | NEC |
获取价格 |
NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA S |
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