Datasheet > 晶体管 > 射频小信号双极晶体管> UPA840TC-FB

UPA840TC-FB

更新时间： 2024-01-11 11:40:14

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
16页	80K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-6

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UPA840TC-FB 技术参数

生命周期：	Obsolete	包装说明：	ULTRA SUPER MINIMOLD PACKAGE-6
Reach Compliance Code：	unknown	风险等级：	5.76
其他特性：	LOW NOISE	最大集电极电流 (IC)：	0.03 A
基于收集器的最大容量：	0.7 pF	集电极-发射极最大电压：	6 V
配置：	SEPARATE, 2 ELEMENTS	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-F6	元件数量：	2
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	12000 MHz
Base Number Matches：	1

UPA840TC-FB 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA840TC

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION

The µPA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to

UHF band.

FEATURES

•

Low noise

Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, V^CE= 3 V, I^C= 3 mA

Q2 : NF = 1.4 dB TYP. @ f = 1 GHz, V^CE= 3 V, I^C= 7 mA

High gain

Q1 : |S^21e|²= 8.5 dB TYP. @ f = 2 GHz, V^CE= 3 V, I^C= 10 mA

Q2 : |S^21e|²= 12.0 dB TYP. @ f = 1 GHz, V^CE= 3 V, I^C= 7 mA

Flat-lead 6-pin thin-type ultra super minimold package

Built-in 2 different transistors (2SC5010, 2SC5007)

•

BUILT-IN TRANSISTORS

3-pin ultra super minimold part No.

2SC5010

2SC5007

ORDERING INFORMATION

Part Number

Package

Quantity

Supplying Form

µPA840TC

Flat-lead 6-pin

thin-type ultra

super minimold

Loose products

(50 pcs)

8 mm wide embossed tape.

Pin 6 (Q1 Base), pin 5 (Q2 Emitter), pin 4 (Q2 Base) face to perforation

side of the tape.

µPA840TC-T1

Taping products

(3 kp/reel)

Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

µPA840TC.)

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14556EJ1V0DS00 (1st edition)

Date Published November 1999 N CP(K)

Printed in Japan

1999

12 3 4 5 6 7...16

中文翻译

下载PDF

与UPA840TC-FB相关器件

型号	品牌	获取价格	描述	数据表
UPA840TC-T1	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE
UPA841TC	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN,
UPA841TC-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA841TC-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN,
UPA841TC-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA841TD	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
UPA841TD-T3	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
UPA841TD-T3-FB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
UPA842TC	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN,
UPA842TC-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN,

与UPA840TC-FB相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

5
PMOS管背靠背连接：串联还是并联？
2024-06-28

7
高压电解电容的分类与选型策略
2024-06-28

8
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

13

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA840TC-FB

UPA840TC-FB 技术参数

UPA840TC-FB 数据手册

与UPA840TC-FB相关器件

与UPA840TC-FB相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA840TC-FB

UPA840TC-FB 技术参数

UPA840TC-FB 数据手册

与UPA840TC-FB相关器件

与UPA840TC-FB相关文章

您还可以找

您在本页遇到什么问题？