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UPA839TF-T1 PDF预览

UPA839TF-T1

更新时间： 2024-01-14 13:34:27
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管
页数 文件大小 规格书
2页 20K
描述
NPN SILICON EPITAXIAL TWIN TRANSISTOR

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中文翻译

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UPA839TF-T1 技术参数

生命周期：Obsolete包装说明：2 X 1.25 MM, SOT-363, 6 PIN
Reach Compliance Code：unknown风险等级：5.84
最大集电极电流 (IC)：0.1 A基于收集器的最大容量：1.5 pF
集电极-发射极最大电压：12 V配置：SEPARATE, 2 ELEMENTS
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G6
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：4500 MHzBase Number Matches：1

UPA839TF-T1 数据手册

 浏览型号UPA839TF-T1的Datasheet PDF文件第2页 
PRELIMINARY DATA SHEET  
NPN SILICON EPITAXIAL  
TWIN TRANSISTOR  
UPA839TF  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
Package Outline TS06  
•
•
•
SMALL PACKAGE OUTLINE:  
SOT-363 package measures just 2.0 mm x 1.25 mm  
2.1 ± 0.1  
1.25 ± 0.1  
LOW HEIGHT PROFILE:  
Just 0.60 mm high  
Q1  
TWO DIFFERENT DIE TYPES:  
Q1 - Ideal oscillator transistor  
Q2 - Ideal buffer amplifier transistor  
1
6
5
0.65  
+0.10  
- 0.05  
2.0 ± 0.2  
0.22  
(All Leads)  
2
Q2  
3
1.3  
DESCRIPTION  
4
TheUPA839TFcontainsoneNE680andoneNE856NPNhigh  
frequency silicon bipolar chip. NEC's new low profile TF  
package is ideal for all portable wireless applications where  
reducing component height is a prime consideration. Each  
transistorchipisindependentlymountedandeasilyconfigured  
for oscillator/buffer amplifier and other applications.  
0.6 ± 0.1  
0.45  
0.13 ± 0.05  
0 ~ 0.1  
PIN CONNECTIONS  
1. Collector (Q1)  
2. Emitter (Q1)  
Note: Pin 1 is the  
lower left most pin as  
the package lettering  
is oriented and read  
left to right.  
4. Base (Q2)  
5. Emitter (Q2)  
6. Base (Q1)  
3. Collector (Q2)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
UPA839TF  
TS06  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
µA  
MIN  
TYP  
MAX  
1.0  
ICBO  
IEBO  
hFE  
Collector Cutoff Current at VCB = 10 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
µA  
1.0  
DC Current Gain1 at VCE = 3 V, IC = 5 mA  
80  
120  
8.0  
0.3  
7.5  
1.9  
200  
fT  
Gain Bandwidth at VCE = 3 V, IC = 5 mA  
GHz  
pF  
5.5  
Cre  
|S21E|2  
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 3 V, IC =5 mA, f = 2 GHz  
Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz  
0.7  
dB  
5.5  
NF  
dB  
3.2  
ICBO  
IEBO  
hFE  
Collector Cutoff Current at VCB = 10 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
µA  
µA  
1.0  
1.0  
DC Current Gain1 at VCE = 3 V, IC = 7 mA  
100  
3.0  
145  
fT  
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz  
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz  
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz  
GHz  
pF  
4.5  
0.7  
9
Cre  
|S21E|2  
1.5  
2.5  
dB  
7
NF  
dB  
1.2  
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.  
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with  
emitter connected to guard pin of capacitances meter.  
California Eastern Laboratories  
12

中文翻译

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