UPA836TF(QI)

更新时间： 2024-02-18 02:25:56

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
12页	69K
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中文翻译

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数据手册

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UPA836TF(QI) 数据手册

PRELIMINARY DATA SHEET

Silicon Transistor

µPA836TF

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

DESCRIPTION

PACKAGE DRAWINGS (Unit:mm)

The µPA836TF has two different built-in transistors (Q1

and Q2) for low noise amplification in the VHF band to UHF

band.

2.10±0.1

1.25±0.1

FEATURES

•

Low noise

Q1 : NF = 1.5 dB TYP. @f = 2 GHz, V^CE= 3 V, I^C= 3 mA

Q2 : NF = 1.7 dB TYP. @f = 2 GHz, V^CE= 1 V, I^C= 3 mA

High gain

Q1 : |S^21e|²= 8.5 dB TYP. @f = 2 GHz, V^CE= 3 V, I^C= 10 mA

Q2 : |S^21e|²= 3.5 dB TYP. @f = 2 GHz, V^CE= 1 V, I^C= 3 mA

6-pin thin-type small mini mold package

2 different transistors on-chip (2SC5193, 2SC4959)

•

ON-CHIP TRANSISTORS

PIN CONFIGURATION (Top View)

3-pin small mini mold part No.

2SC4959

2SC5193

The µPA833TF features the Q1 and Q2 in inverted positions.

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

µPA836TF

Loose products 8-mm wide embossed tape.

(50 pcs)

Pin 6 (Q1 Base), pin 5 (Q2

Emitter), and pin 4 (Q2 Base)

face perforated side of tape.

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

µPA836TF-T1

4. Base (Q2)

Taping products

(3 kpcs/reel)

5. Emitter (Q2)

6. Base (Q1)

3. Collector (Q2)

Caution is required concerning excess input, such as fromcstealetictricity, because the high-frequency

process is used for this device.

The information in this document is subject to change without notice.

Document No. P12728EJ1V0DS00 (1st edition)

Date Published August 1997 N

Printed in Japan

1997

12 3 4 5 6 7...12

中文翻译

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