Datasheet > UPA836TD

UPA836TD

更新时间： 2024-02-22 15:29:38

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
40页	194K
描述
TRANSISTOR \| BJT \| PAIR \| NPN \| 6V V(BR)CEO \| 100MA I(C) \| TSOP

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UPA836TD 技术参数

生命周期：	Obsolete	包装说明：	THIN, MINIMOLD PACKAGE-6
Reach Compliance Code：	unknown	风险等级：	5.3
其他特性：	LOW NOISE	最大集电极电流 (IC)：	0.03 A
基于收集器的最大容量：	0.7 pF	集电极-发射极最大电压：	6 V
配置：	SEPARATE, 2 ELEMENTS	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G6	元件数量：	2
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	12000 MHz

UPA836TD 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA836TD

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD

FEATURES

•

Low voltage operation

2 different built-in transistors (2SC5435, 2SC5437)

Q1: Built-in low noise, high-gain transistor

NF = 1.5 dB TYP. @ V^CE= 3 V, I^C= 3 mA, f = 2 GHz

f^T= 12.0 GHz TYP., S^21e²= 8.5 dB TYP. @ V^CE= 3 V, I^C= 10 mA, f = 2 GHz

Q2: Built-in low noise transistor

NF = 1.5 dB TYP. @ V^CE= 3 V, I^C= 7 mA, f = 2 GHz

NF = 1.7 dB TYP. @ V^CE= 1 V, I^C= 3 mA, f = 2 GHz

6-pin lead-less minimold package

•

BUILT-IN TRANSISTORS

3-pin thin-type ultra super minimold part No.

2SC5435

2SC5437

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

10 kpcs/reel

Supplying Form

µPA836TD

µPA836TD-T3

• 8 mm wide embossed taping

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15358EJ1V0DS00 (1st edition)

Date Published March 2001 NS CP(K)

Printed in Japan

2001

12 3 4 5 6 7...40

中文翻译

下载PDF

与UPA836TD相关器件

型号	品牌	获取价格	描述	数据表
UPA836TD-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS
UPA836TD-T3	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| NPN \| 6V V(BR)CEO \| 100MA I(C) \| TSOP
UPA836TF	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI
UPA836TF(Q2)	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, TS06
UPA836TF(QI)	NEC	获取价格	暂无描述
UPA836TFFB-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili
UPA836TF-T1	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI
UPA836TF-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili
UPA837TF	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA837TF-T1	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA836TD

UPA836TD 技术参数

UPA836TD 数据手册

与UPA836TD相关器件

与UPA836TD相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA836TD

UPA836TD 技术参数

UPA836TD 数据手册

与UPA836TD相关器件

与UPA836TD相关文章

您还可以找

您在本页遇到什么问题？