Datasheet > UPA836TC-FB

UPA836TC-FB

更新时间： 2024-02-05 12:23:11

品牌	Logo	应用领域
日电电子 - NEC		光电二极管晶体管
页数	文件大小	规格书
37页	187K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6

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技术参数
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UPA836TC-FB 技术参数

生命周期：	Obsolete	包装说明：	THIN, ULTRA SUPER MINIMOLD PACKAGE-6
Reach Compliance Code：	unknown	风险等级：	5.68
最大集电极电流 (IC)：	0.03 A	基于收集器的最大容量：	0.7 pF
集电极-发射极最大电压：	6 V	配置：	SEPARATE, 2 ELEMENTS
最高频带：	L BAND	JESD-30 代码：	R-PDSO-F6
元件数量：	2	端子数量：	6
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	12000 MHz
Base Number Matches：	1

UPA836TC-FB 数据手册

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

µPA836TC

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

•

Low voltage operation

2 different built-in transistors (2SC5435, 2SC5437)

Q1: Low phase distortion, high-gain transistor

NF = 1.5 dB TYP. @ V^CE= 3 V, I^C= 3 mA, f = 2 GHz

f^T= 12.0 GHz TYP., S^21e²= 8.5 dB TYP. @ V^CE= 3 V, I^C= 10 mA, f = 2 GHz

Q2: Low phase distortion transistor

NF = 1.5 dB TYP. @ V^CE= 3 V, I^C= 7 mA, f = 2 GHz

NF = 1.7 dB TYP. @ V^CE= 1 V, I^C= 3 mA, f = 2 GHz

Flat-lead 6-pin thin-type ultra super minimold package

•

BUILT-IN TRANSISTORS

3-pin thin-type ultra super minimold part No.

2SC5435

2SC5437

ORDERING INFORMATION

Part Number

Quantity

50 pcs (Non reel)

3 kpcs/reel

Supplying Form

• 8 mm wide embossed taping

µPA836TC

µPA836TC-T1

• Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)

face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10114EJ01V0DS (1st edition)

Date Published March 2002 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2002

12 3 4 5 6 7...37

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与UPA836TC-FB相关器件

型号	品牌	获取价格	描述	数据表
UPA836TC-T1	NEC	获取价格	NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA836TC-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULT
UPA836TD	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| NPN \| 6V V(BR)CEO \| 100MA I(C) \| TSOP
UPA836TD-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS
UPA836TD-T3	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| NPN \| 6V V(BR)CEO \| 100MA I(C) \| TSOP
UPA836TF	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI
UPA836TF(Q2)	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, TS06
UPA836TF(QI)	NEC	获取价格	暂无描述
UPA836TFFB-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Sili
UPA836TF-T1	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI

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