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UPA1456

更新时间: 2024-11-23 22:41:43
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日电电子 - NEC 晶体晶体管达林顿晶体管开关
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6页 57K
描述
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

UPA1456 数据手册

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DATA SHEET  
SILICON TRANSISTOR ARRAY  
µPA1456  
NPN SILICON POWER TRANSISTOR ARRAY  
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSION  
(in m illim eters)  
The µPA1456 is NPN silicon epitaxial Darlington  
Power Transistor Array that built in 4 circuits designed  
for driving solenoid, relay, lam p and so on.  
26.8 MAX.  
4.0  
FEATURES  
Easy m ount by 0.1 inch of term inal interval.  
High hFE for Darlington Transistor.  
ORDERING INFORMATION  
1.4  
0.5 ±0.1  
2.54  
Part Num ber  
Package  
Quality Grade  
Standard  
1.4 0.6 ±0.1  
µPA1456H  
10 Pin SIP  
1 2 3 4 5 6 7 8 9 10  
Please refer to "Quality grade on NEC Sem iconductor Devices"  
(Docum ent num ber IEI-1209) published by NEC Corporation to  
know the specification of quality grade on the devices and its  
recom m ended applications.  
CONNECTION DIAGRAM  
3
5
7
9
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)  
2
1
4
6
8
Collector to Base Voltage  
Collector to Em itter Voltage  
Em itter to Base Voltage  
Collector Current (DC)  
Collector Current (pulse)  
Base Current (DC)  
VCBO  
VCEO  
VEBO  
IC(DC)  
150  
100  
7
V
V
10  
V
±5  
A/unit  
A/unit  
A/unit  
W
(C)  
IC(pulse)* ±10  
IB(DC)  
PT1**  
PT2***  
Tj  
0.5  
3.5  
28  
PIN No.  
2, 4, 6, 8: Base (B)  
3, 5, 7, 9: Collector (C)  
Total Power Dissipation  
Total Power Dissipation  
J unction Tem perature  
Storage Tem perature  
W
(B)  
1, 10  
: Emitter (E)  
150  
˚C  
.
.
R1 = 3.0 k  
R2 = 300 Ω  
.
R1  
R2  
Tstg –55 to +150 ˚C  
.
* PW 300 µs, Duty Cycle 10 %  
** 4 Circuits, Ta = 25 ˚C  
(E)  
*** 4 Circuits, Tc = 25 ˚C  
The inform ation in this docum ent is subject to change w ithout notice.  
Document No. IC-3521  
(O. D. No. IC-6340)  
Date Published September 1994  
Printed in Japan  
P
1994  
©

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