UPA1500B

更新时间： 2024-11-23 22:41:43

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
8页	95K
描述
N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

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中文翻译

获取价格

数据手册

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UPA1500B 数据手册

DATA SHEET

COMPOUND FIELD EFFECT POWER TRANSISTOR

µPA1500B

N-CHANNEL POWER MOS FET ARRAY

SWITCHING USE

DESCRIPTION

PACKAGE DIMENSIONS

The µPA1500B is N-channel Power MOS FET Array

that built in 4 circuits and surge absorber designed for

solenoid, motor and lamp driver.

(in millimeters)

4.2 MAX.

31.5 MAX.

FEATURES

•

4 V driving is possible

•

Large Current and Low On-state Resistance

I^D(DC)= ±3 A

2 3 4 5 6 7 8 9 10 11 12

R^DS(on)1≤ 0.18 Ω MAX. (VGS = 10 V, ID = 2 A)

R^DS(on)2≤ 0.24 Ω MAX. (VGS = 4 V, ID = 2 A)

Low Input Capacitance Ciss = 200 pF TYP.

Surge Absorber, built in

•

2.54 TYP.

0.7±0.1

1.4±0.1 0.5±0.1

1.4 TYP.

ORDERING INFORMATION

ELECTRODE CONNECTION

1, 5, 8, 12 GATE

2, 4, 9, 11 DRAIN, ANODE

Type Number

Package

6, 7

SOURCE

3, 10

CATHODE

µPA1500BH

12 Pin SIP

CONNECTION DIAGRAM

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Note 1

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Repetitive peak Reverse Voltage VRRM

Diode Forward Current

Total Power Dissipation

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. V^GS= 0

VDSS

V^GSS

I^D(DC)

±20

±3.0

±12

A/unit

˚C

Note 2

Note 3

I^D(pulse)

Note 4

I^F(av)

3.0

Note 5

P^T1

P^T2

T^CH

T^stg

I^AS

E^AS

4.0

150

–55 to 150

3.0

Note 6

Note 7

0.9

2. V^DS= 0

3. PW ≤ 10 µs, Duty Cycle ≤ 1 %

4. Rating of Surge Absorber

5. 4 Circuits, T

6. 4 Circuits, TA = 25 ˚C

to D

: Body Diode

: Surge Absorber

: Gate to Source Protection Diode

= 25 ˚C

: Gate Input Resistance 330 Ω TYP.

7. Starting TCH = 25 ˚C, V DD = 30 V, VGS = 20 V → 0,

RG = 25 Ω, L = 100 µH

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

Document No. G10597EJ2V0DS00 (2nd edition)

Date Published December 1995 P

Printed in Japan

1995

12 3 4 5 6 7 8

中文翻译

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与UPA1500B相关器件

型号	品牌	获取价格	描述	数据表
UPA1500BH	NEC	获取价格	N-CHANNEL POWER MOS FET ARRAY SWITCHING USE
UPA1500BH-AZ	RENESAS	获取价格	3A, 60V, 0.024ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SIP-12
UPA1501	NEC	获取价格	N - CHANNEL POWER MOS FET ARRAY SWITCHING TYPE
UPA1501H	NEC	获取价格	N - CHANNEL POWER MOS FET ARRAY SWITCHING TYPE
UPA1501H-AZ	NEC	获取价格	暂无描述
UPA1520B	NEC	获取价格	N-CHANNEL POWER MOS FET ARRAY SWITCHING USE
UPA1520BH	NEC	获取价格	N-CHANNEL POWER MOS FET ARRAY SWITCHING USE
UPA1520BH	RENESAS	获取价格	2A, 30V, 0.25ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SIP-10
UPA1520BH-AZ	NEC	获取价格	Power Field-Effect Transistor, 2A I(D), 30V, 0.25ohm, 4-Element, N-Channel, Silicon, Metal
UPA1520H	ETC	获取价格	TRANSISTOR \| MOSFET \| ARRAY \| N-CHANNEL \| 30V V(BR)DSS \| 2A I(D) \| SIP

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