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UPA1478

更新时间: 2024-11-24 04:26:55
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管达林顿晶体管开关
页数 文件大小 规格书
6页 61K
描述
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

UPA1478 数据手册

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DATA SHEET  
SILICON TRANSISTOR ARRAY  
µPA1478  
NPN SILICON POWER TRANSISTOR ARRAY  
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSION  
(in m illim eters)  
The µPA1478 is NPN silicon epitaxial Darlington  
Power Transistor Array that built in Surge Absorber and  
4 circuits designed for driving solenoid, relay, lam p and  
so on.  
26.8 MAX.  
4.0  
FEATURES  
Surge Absorber (Zener Diode) built in.  
Easy m ount by 0.1 inch of term inal interval.  
High hFE for Darlington Transistor.  
1.4  
0.5 ±0.1  
2.54  
1.4 0.6 ±0.1  
ORDERING INFORMATION  
Part Num ber  
Package  
Quality Grade  
Standard  
1 2 3 4 5 6 7 8 9 10  
µPA1478H  
10 Pin SIP  
CONNECTION DIAGRAM  
Please refer to "Quality grade on NEC Sem iconductor Devices"  
(Docum ent num ber IEI-1209) published by NEC Corporation to  
know the specification of quality grade on the devices and its  
recom m ended applications.  
3
5
7
9
2
1
4
6
8
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
10  
Collector to Base Voltage  
VCBO  
31 ±4  
31 ±4  
7
V
V
Collector to Em itter Voltage VCEO  
(C)  
Em itter to Base Voltage  
Surge Sustaining Energy  
Collector Current (DC)  
Collector Current (pulse)  
Total Power Dissipation  
Total Power Dissipation  
J unction Tem perature  
Storage Tem perature  
VEBO  
V
ECEO (SUS)  
IC(DC)  
40  
m J /unit  
A/unit  
A/unit  
W
PIN No.  
±2  
2, 4, 6, 8: Base (B)  
3, 5, 7, 9: Collector (C)  
(B)  
IC(pulse)*  
PT1**  
PT2***  
TJ  
±4  
1, 10  
: Emitter (E)  
3.5  
28  
.
.
R1 = 10 k  
R2 = 500 Ω  
.
R1  
R2  
W
.
150  
˚C  
(E)  
Tstg  
–55 to +150 ˚C  
* PW 300 µs, Duty Cycle 10 %  
** 4 Circuits, Ta = 25 ˚C  
*** 4 Circuits, Tc = 25 ˚C  
The inform ation in this docum ent is subject to change w ithout notice.  
Document No. IC-3566  
(O.D. No. IC-6634)  
Date Published November 1994  
Printed in Japan  
P
1994  
©

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