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UMG11NTL PDF预览

UMG11NTL

更新时间: 2024-11-15 13:01:51
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管数字晶体管
页数 文件大小 规格书
3页 76K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon,

UMG11NTL 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.75
Is Samacsys:N其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21.3
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-G5JESD-609代码:e2
元件数量:2端子数量:5
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Copper (Sn/Cu)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONVCEsat-Max:0.3 V
Base Number Matches:1

UMG11NTL 数据手册

 浏览型号UMG11NTL的Datasheet PDF文件第2页浏览型号UMG11NTL的Datasheet PDF文件第3页 
EMG11 / UMG11N / FMG11A  
Transistors  
Emitter common (dual digital transistors)  
EMG11 / UMG11N / FMG11A  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Two DTA123Js chips in a EMT or UMT or SMT  
package.  
EMG11  
(
(
)
)
( )  
3
( )  
2
( )  
1
4
5
1.2  
1.6  
zEquivalent circuit  
EMG11 / UMG11N  
FMG11A  
Each lead has same dimensions  
(3)  
(2)  
(1)  
(3)  
(4)  
(5)  
ROHM : EMT5  
UMG11N  
R
1
R
1
R
1
R1  
R2  
R2  
R2  
R2  
DTr2  
DTr  
1
DTr2  
DTr1  
R
R
1
=2.2kΩ  
=47kΩ  
(4)  
(5)/(6)  
(2)  
(1)  
2
1.25  
2.1  
zPackage, marking, and packaging specifications  
Type  
Package  
EMG11  
EMT5  
G11  
UMG11N FMG11A  
UMT5  
G11  
TR  
SMT5  
G11  
0.1Min.  
Marking  
Code  
T2R  
T148  
3000  
Each lead has same dimensions  
Basic ordering unit (pieces)  
8000  
3000  
ROHM : UMT5  
EIAJ : SC-88A  
FMG11A  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
Limits  
Unit  
Supply voltage  
VCC  
50  
V
12  
Input voltage  
VIN  
V
5  
1.6  
2.8  
Output current  
I
O
100  
mA  
mA  
Collector current  
I
C(MAX)  
100  
150(TOTAL)  
300(TOTAL)  
150  
1  
2  
Pd  
mW  
Power dissipation  
0.3Min.  
Junction temperature  
Storage temperature  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
Tj  
°C  
°C  
Each lead has same dimensions  
Tstg  
50 to +150  
ROHM : SMT5  
EIAJ : SC-74A  
zElectrical characteristics (Ta = 25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
0.5  
Conditions  
Unit  
V
V
I (off)  
1.1  
V
CC=5V, I  
=0.3V, I  
=5mA, I =0.25mA  
=5V  
CC=50V, V  
=10mA, V  
O
=100µA  
Input voltage  
V
I (on)  
V
O
O
=5mA  
Output voltage  
Input current  
V
O (on)  
0.1  
0.3  
3.6  
0.5  
2.86  
V
mA  
µA  
kΩ  
MHz  
I
O
I
I
I
V
V
I
Output current  
DC current gain  
Input resistance  
Transition frequency  
I
O (off)  
I
=0V  
=5V  
G
I
80  
1.54  
I
O
O
R1  
2.2  
250  
21  
f
T
V
CE=10V, I  
E
=−5mA, f=100MHz  
Resistance ratio  
R2  
/ R1  
17  
26  
Transition frequency of the device.  
Rev.A  
1/2  

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