Datasheet > UMG4N

UMG4N

更新时间： 2024-11-06 14:55:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	631K
描述
SOT-353

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中文翻译

获取价格

数据手册

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UMG4N 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors (Built-in Resistors)

UMG4N Dual Digital Transistors (NPN+NPN)

SOT-353

FEATURES

Two DTC114T chips in a package

Marking: G4

Absolute maximum ratings (Ta=25℃)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-base Voltage

Collector-emitter Voltage

Emitter-base Voltage

Collector current

Value

Unit

100

150

Power dissipation(note 1)

P_D

Operation Junction and Storage

Temperature Range

T_J,T_stg

-55~+150

℃

Note:

1.120mW per element not be exceeded.

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol

Test c onditions

Min

Typ

Max

Unit

V_(BR)CBOI_C=50μA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=50μA, I_C=0

I_CBO

I_EBO

h_FE

V_CB=50V, I_E=0

500

600

0.3

Emitter cut-off current

V_EB=4V, I_C=0

DC current transfer ration

Collector-emitter saturation voltage

Transition frequency

V_CE=5V, I_C=1mA

100

250

V_CE(sat)

f_T

I_C=10mA, I_B=1mA

V_CE=10V, I_E=-5mA, f =100MHz

250

MHz

KΩ

Input resistance

R₁

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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